ksmb30n06l / KSMI30N06L 60v logic n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as automotive, dc/ dc converters, and high efficiency switching for power management in portable and battery operated products. features ? 32a, 60v, r ds(on) = 0.035 ? @v gs = 10 v ? low gate charge ( typical 15 nc) ? low crss ( typical 50 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating ! " ! ! ! " " " ! " ! ! ! " " " absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ksmb30n06l / KSMI30N06L units v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 32 a - continuous (t c = 100c) 22.6 a i dm drain current - pulsed (note 1) 128 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 350 mj i ar avalanche current (note 1) 32 a e ar repetitive avalanche energy (note 1) 7.9 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t a = 25c) * 3.75 w power dissipation (t c = 25c) 79 w - derate above 25c 0.53 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 1.90 c / w r ja thermal resistance, junction-to-ambient * -- 40 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w * when mounted on the minimum pad size recommended (pcb mount) s d g to-263 to-262 2014-8-1 1 www.kersemi.com
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 400 h, i as = 32a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 32a, di/dt 300a/us, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.06 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1.0 -- 2.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 16 a v gs = 5 v, i d =16 a -- -- 0.027 0.035 0.035 0.045 ? g fs forward transconductance v ds = 25 v, i d = 16 a -- 24 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 800 1040 pf c oss output capacitance -- 270 350 pf c rss reverse transfer capacitance -- 50 65 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 16 a, r g = 25 ? -- 15 40 ns t r turn-on rise time -- 210 430 ns t d(off) turn-off delay time -- 60 130 ns t f turn-off fall time -- 110 230 ns q g total gate charge v ds = 48 v, i d = 32 a, v gs = 5 v -- 15 20 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 8.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 32 a i sm maximum pulsed drain-source diode forward current -- -- 128 a v sd drain-source diode forward voltage v gs = 0 v, i s = 32 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 32 a, di f / dt = 100 a/ s -- 60 -- ns q rr reverse recovery charge -- 90 -- nc (note 4) (note 4, 5) (note 4, 5) (note 4) ksmb30n06l / KSMI30N06L 2014-8-1 2 www.kersemi.com
10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 30v v ds = 48v not e : i d = 32a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 20406080100120 0 20 40 60 80 v gs = 10v v gs = 5v not e : t j = 25 r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0246810 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics ksmb30n06l / KSMI30N06L 2014-8-1 3 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 1.90 /w m a x. 2 . d u t y fa c t o r , d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u a re w a v e p u ls e d u ra tio n [s e c ] 25 50 75 100 125 150 175 0 10 20 30 40 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) not es : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 16 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 ksmb30n06l / KSMI30N06L 2014-8-1 4 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveform charge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 5v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 5v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p ksmb30n06l / KSMI30N06L 2014-8-1 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ksmb30n06l / KSMI30N06L 2014-8-1 6 www.kersemi.com
package dimensions 10.00 0.20 10.00 0.20 (8.00) (4.40) 1.27 0.10 0.80 0.10 0.80 0.10 (2xr0.45) 9.90 0.20 4.50 0.20 0.10 0.15 2.40 0.20 2.54 0.30 15.30 0.30 9.20 0.20 4.90 0.20 1.40 0.20 2.00 0.10 (0.75) (1.75) (7.20) 0 ~3 1.20 0.20 9.20 0.20 15.30 0.30 4.90 0.20 (0.40) 2.54 typ 2.54 typ 1.30 +0.10 ?.05 0.50 +0.10 ?.05 d 2 pak ksmb30n06l / KSMI30N06L 2014-8-1 7 www.kersemi.com
package dimensions (continued) 9.90 0.05 0.50 +0.10 0.05 i 2 pak ksmb30n06l / KSMI30N06L 2014-8-1 8 www.kersemi.com
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